METHOD FOR OBTAINING A FILM OF PERMALLOY NITRIDE FeNiN Russian patent published in 2022 - IPC C23C14/35 C23C14/56 

Abstract RU 2784453 C1

FIELD: magnetic films production.

SUBSTANCE: invention relates to a method for producing magnetic films used in spintronics and magnonics devices. The method for obtaining a film of permalloy nitride FexNi1-xN, with 0.23≤x≤0.27, includes deposition of the said film on the substrate by the method for reactive magnetron sputtering of the target. A target consisting of two plates is used. A magnetron is installed in the vacuum chamber, on the body of which the inner target plate of iron and the outer target plate of nickel are rigidly fixed with slots in the form of holes with a total area in the range (0.95-1.71)⋅10-3 m2, and fixed substrate with ensuring the distance to the target in the range (33-38)⋅10-3 m. The vacuum chamber is evacuated to a residual pressure of (1-5)⋅10-6 Torr, the plasma-forming argon gas is introduced to ensure pressure in the vacuum chamber (3–6)⋅10-3 Torr. Then, a nitrogen flow is introduced into the vacuum chamber at a rate in the range of 3–10 cm3/min and the magnetron discharge current density is provided in the range (350–700) A/m2 for reactive magnetron sputtering with argon ions of iron and nickel nitrides formed on iron and nickel plates at a temperature of the said plates, which is 1800-2000 K.

EFFECT: obtaining on the substrate a film of permalloy nitride FexNi1–xN, which has a coercive force of less than 1 Oe.

1 cl, 9 dwg, 1 ex

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RU 2 784 453 C1

Authors

Shapovalov Viktor Ivanovich

Dates

2022-11-24Published

2022-04-07Filed