FIELD: chemical technology, semiconductors.
SUBSTANCE: invention relates to a method for preparing semiconductor fine films of multicomponent solid solutions. Method for preparing epitaxial layers of silicon carbide solid solution with aluminum nitride SiC-AlN involves precipitation of the solid solution on monocrystalline backing SiC-6H at temperature 1000°C by magnetron ion-plasma spraying carrying out on a single target of polycrystalline solid solution SiC-AlN prepared by hot pressing method of mixture of SiC and AlN powders. Invention provides simplifying technology in preparing layers, improvement of their uniformity and reducing energy consumptions.
EFFECT: improved preparing method.
3 dwg
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