POWER SWITCH BUILT AROUND MIS TRANSISTOR Russian patent published in 2000 - IPC

Abstract RU 2152127 C1

FIELD: pulse engineering; contactless switching devices. SUBSTANCE: device has two same-conductivity transistors whose base-emitter junctions are shorted out by resistors and collector-emitter junctions, by diodes connected in cut-off direction; resistor is also inserted between bases of transistors. Transistor emitters are connected to transformer secondary winding and their collectors, to MIS transistor gate-source junction. EFFECT: improved reliability. 1 dwg

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RU 2 152 127 C1

Authors

Mikheev P.V.

Lutaev N.A.

Sokolov M.I.

Dates

2000-06-27—Published

1998-06-22—Filed