RF PLASMA SOURCE WITH A PLANAR INDUCTOR FOR PROCESSING SEMICONDUCTOR WATER WATER UP TO 600 mm DIAMETER Russian patent published in 2022 - IPC H05H1/46 H01J37/32 

FIELD: plasma generation devices.

SUBSTANCE: invention relates to devices designed to generate low-temperature highly ionized plasma. The RF plasma source contains a cylindrical vacuum chamber hermetically separated by a dielectric RF power input window into two volumes. In the first volume, semiconductor wafers are processed by means of the action of technological inductively coupled plasma, the second volume, the cylindrical wall and cover of which are made of a diamagnetic material, is designed to accommodate a planar spiral RF inductor. When plasma is generated in the process volume in the operating pressure range of 1–100 mTorr, the pressure of an inert gas with a high ionization potential in the range of 5–20 Torr is maintained in the inductor volume, which prevents the occurrence of a parasitic gas discharge in the inductor volume in the entire HF range. powers applied to the inductor and used to generate plasma in the technological volume.

EFFECT: increasing the radial homogeneity of low-pressure plasma for processing semiconductor wafers of large diameter up to 600 mm.

8 cl, 2 dwg