REACTOR FOR PLASMA TREATMENT OF SEMICONDUCTOR STRUCTURES Russian patent published in 1999 - IPC

FIELD: microelectronics. SUBSTANCE: reactor has chamber incorporating gas inlet and outlet system, substrate holder installed at chamber base for applying bias potential across it, and plasma generating system built up of spiral inductor mounted above insulating screen and matching system for coupling spiral inductor with high-frequency oscillator. Matching system has ferrite- core transformer, inductance coil, and capacitor the latter being connected in parallel with spiral inductor; bias potential is applied across substrate holder through circuit set up of additional inductance coils and capacitors connected to matching system. In addition, spiral inductor may be built of two planar sections, main and additional ones; the latter section placed above the former one has smaller diameter and is connected differentially to main section. Spiral inductor may be built of two planar sections, main and additional ones; the latter is placed above and connected in series with main section; its outer diameter equals that of main section. Central turns of spiral inductor may be spaced at greater distance from insulating screen than peripheral ones. L-C circuit may be connected to one of spiral inductor leads or to transformer primary in matching system. EFFECT: improved performance characteristics of reactor. 5 cl, 2 dwg