METHOD FOR GROWING SILICON MONOCRYSTAL FROM MELT Russian patent published in 2018 - IPC C30B15/00 C30B29/06 

FIELD: technological processes.

SUBSTANCE: invention relates to the technology of obtaining the silicon by the Czochralski method for electronic engineering and photovoltaic. Heated up working gas inside chamber 3 is directed upward parallel to the vertical axis of chamber 3 and, without passing over melt 2, is discharged through adjustable valves 13 located at the top of the side surface of chamber 3 above the level of crucible 8, simultaneously with the main gas stream, an auxiliary hot working gas stream is supplied to the upper part of chamber 3 from a separate source in the volumes necessary to maintain a constant gas flow rate, its motion trajectory is formed by guiding well 5 and that squeezes the vapor-gas mixture forming above melt 2 through a narrow gap between the surface of melt 2 and the base of guiding well 5, at that the main flow of working gas moving from the bottom to the top entrains the vapor-gas mixture and evacuates it through adjustable valves 13 to the evacuation devices.

EFFECT: technical result consists in reducing the rate of destruction of the elements of the thermal assembly and the crucible by forming a working gas flow in such a way as to minimize the formation of silicon and carbon monoxide, and also to exclude the effect of an aggressive vapor-gas mixture on the elements of the thermal unit; while the qualitative characteristics of grown single crystals are improved by eliminating the source of additional contamination of the chamber atmosphere by the products of interaction of the aggressive vapor-gas mixture with the elements of the thermal unit.

1 cl, 1 dwg, 2 ex