HIGH-FREQUENCY PLASMA SOURCE Russian patent published in 2023 - IPC H05H1/24 H05H1/46 

FIELD: plasma technology.

SUBSTANCE: invention relates to plasma technology and is mainly intended for use in technological processes of plasma treatment of products. The high-frequency plasma source contains an annular dielectric discharge chamber formed by inner and outer annular walls, in the inner end part of which there is a device for inputting the working fluid from the dielectric, and on the outer side there is an end active electrode with a supply to the high-frequency generator. The magnetic system is represented by electromagnets and a magnetic circuit with internal and external magnetic poles. A grounded electrode connected to a high-frequency generator is placed at the outlet of the discharge chamber.

EFFECT: increasing the reliability of the plasma source, eliminating the ingress of foreign materials into the resulting plasma stream, reducing the time it takes to reach a given mode, reducing the amount of the working fluid involved in the plasma formation process.

2 cl, 2 dwg