FIELD: atomic emission analysis.
SUBSTANCE: when implementing the method, the sample is purged with a high-frequency argon flow, then a periodic discharge is ignited, and radiation is focused on the entrance slit of the spectrograph. Next, the intensity of the analytical line is measured by summing the values of the digitized charges of the individual pixels of the photodiode devices with charge coupling, on which the image of the analytical line of the selected impurity element falls. Then, an exact correction to the value of the plasma background is calculated, after which computer modelling of the configuration of the background radiation curve is carried out, taking into account the found exact correction. The true intensity of the analytical line of the impurity element is obtained by eliminating the signal that corresponds to the intensity of the background radiation of the plasma and building calibration graphs for two standard samples.
EFFECT: increasing the accuracy and reliability of the determination of impurities in metals and alloys.
1 cl, 3 dwg, 1 tbl, 4 ex
