FIELD: electron-sensitive matrices; avalanche photodiodes.
SUBSTANCE: invention relates to methods for creating an electron flow in vacuum and can be used to study the characteristics of electron-sensitive matrices, control the quality of the surface of semiconductor materials, and also in various devices that are sensitive to the electron flow, for example, in avalanche photodiodes as electron detectors. The technical result is the ability to obtain an electron flow in a vacuum, ranging from fractions of a nanoampere to several microamperes, the magnitude and intensity of which can be precisely controlled, saving materials and time when testing CCD matrices and studying the uniformity of their sensitivity to electrons. A non-radiative method for creating an electron flow in vacuum stipulates for placing a cathode and an anode in a dark high-vacuum chamber, where an electron transfer photocathode based on an AIIIBV heterostructure with a metal grid deposited on the electron emission side with a line width of grid 1-5 mcm and grid pitch 1-100 mcm, and the photocathode is placed on the bracket with the possibility of changing its position, thermal cleaning and activation of the photocathode in vacuum are carried out in a standard way, the photocathode is placed opposite the anode due to the movement of the bracket, after which a bias voltage is applied to the metal grid of the photocathode in the range of several volts to generate an electron flow in the dark, and a potential difference is created between the photocathode and the anode in the range of 100-5000 V to adjust the electron energy.
EFFECT: ability to obtain an electron flow in a vacuum, ranging from fractions of a nanoampere to several microamperes, the magnitude and intensity of which can be precisely controlled, saving materials and time when testing CCD matrices and studying the uniformity of their sensitivity to electrons.
1 cl, 2 dwg
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Authors
Dates
2023-03-20—Published
2022-05-04—Filed