FIELD: physics.
SUBSTANCE: method of producing a photoelectronic device comprises producing the device body, the cathode node, the collector of the electrons, the installation of the internal parts and nodes, welding the device nodes, loading all the nodes into the vacuum installation of the finishing assembly, pumping the entire system, thermal degassing all the nodes in the vacuum, electronic degassing the microchannel plates (MCPs) and the collector of the electrons in the vacuum, producing the photocathode on the cathode node, sealing the device, unloading the photoelectric devices (PED) from the finishing assembly, pumping the whole system up to the pressure of not more than 10-8 PA, thermal degassing all the nodes in the vacuum for, at least, 4 hours at the temperature of 300 to 400°C, electronic degassing the MCPs and the collector of the electrons are carried out after loading the body with the microchannel plates and the collector of the electrons into the high-vacuum installation of the finishing assembly of the cathode node, for what the electron flow is directed during, at least, 30 seconds at the temperature of 0 to 400°C from the inlet to the outlet of the MCP and further to the collector of the electrons, after which the body with the MCPs is turned over by the manipulator, and the electron flow is directed from the outlet to the inlet of the MCP and further to the collector of the electrons, simultaneously changing the polarity of the voltage between the inlet and the outlet of the MCP, it is cured for, at least, 30 seconds, the body is turned over again with the MCP, changing the polarity of the voltage, and so it is repeated for, at least, 2 hours until complete outgassing the MCPs, gradually increasing the voltage on the MCP and the output current of the MCP to the values not deteriorating the parameters of the MCP, and then the photocathode is formed on the cathode node, and further the body with the MCPs is mounted on the collector of the electrons, and the cathode node is mounted on the body, and sealing the device is performed.
EFFECT: increasing the service life of the photoelectric devices without the ion-barrier film.
2 dwg
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Authors
Dates
2017-04-19—Published
2015-11-27—Filed