METHOD FOR MAGNETRON SPUTTERING OF GALLIUM OXIDE IN DIRECT CURRENT BY DOPING IT WITH SILICON ATOMS Russian patent published in 2023 - IPC H01L21/203 

FIELD: alloying.

SUBSTANCE: invention relates to the technology of magnetron sputtering of Ga₂O₃ films in direct current by pre-doping the Ga₂O₃ target with silicon atoms. The invention consists in a two-stage process, where the first stage is the preparation of a Si-doped Ga₂O₃ target. The second stage is followed by magnetron sputtering of the Ga₂O₃:Si target in direct current at a temperature of 900°C to the surface of the sapphire.

EFFECT: reducing the resistance of the target, increasing its electrically conductive properties, and thereby using constant electricity at the stage of magnetron sputtering. The Ga₂O₃:Si target preparation technology used also makes it possible to uniformly distribute doped silicon in the Ga₂O₃ thickness, which ensures uniform electrical conduction properties of the final Ga₂O₃:Si film on the sapphire substrate surface.

1 cl, 1 dwg