METHOD FOR FORMING POLYCRYSTALLINE SILICON Russian patent published in 2023 - IPC C30B28/14 C30B29/06 

FIELD: semiconductor technology.

SUBSTANCE: invention can be used in the manufacture of micro-, nanoelectronic and optoelectronic devices, such as thin-film field-effect transistors, non-volatile memory cells and solar cells. A thin layer of Au gold is formed on a pre-cleaned substrate using thermal vacuum deposition, and on this layer there is a layer of non-stoichiometric silicon suboxide α-SiO_x applied by magnetron sputtering. Fused quartz or monocrystalline silicon (c-Si) with a sublayer of thermal silicon oxide (t-SiO₂) is used as a substrate. The Au layer thickness is selected from 15 nm to half the thickness of layer α-SiO_x, selected from the range from double the thickness of the gold layer to several microns. The resulting composite is treated with radiation from a solid-state pulsed Nd-YAG laser with a wavelength of 1064 nm and a pulse duration of 11 ns with a Gaussian spatial profile and with an energy density from 0.33 to 1.3 J/cm², causing a phase transition in the amorphous silicon layer with the formation of continuous film of polycrystalline silicon in the region of radiation exposure at a given layer thickness of α-SiO_x. In this case, the number of pulses is 50, and the frequency varies in the range from 0 to 3000 Hz.

EFFECT: homogeneous films of polycrystalline silicon without contamination are obtained.

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