METHOD FOR MANUFACTURING ELECTRONIC TERAHERTZ FREQUENCY DETECTORS Russian patent published in 2023 - IPC H01L21/268 

FIELD: microelectronics.

SUBSTANCE: method for manufacturing detectors of the terahertz range of electromagnetic waves with tunnel MIM diodes, including sequential formation of a cathode metal layer, a thin tunnel insulator layer, an auxiliary insulator layer with holes on the surface of a semiconductor wafer, laser-pyrolytic deposition of the anode metal and the formation of a microstrip line, in accordance with the invention, a layer of an auxiliary insulator is deposited in a vacuum on a layer of a tunnel insulator with a layer of non-contiguous nanospheres previously deposited on its surface, after which holes are obtained by removing nanospheres and then an anode electrode is formed by addressable laser-pyrolytic metal deposition in an atmosphere containing vapours of a volatile chemical metal connection, on the section of the auxiliary insulator with the overlapping of the edges of the hole, continuing application until a microstrip line is formed.

EFFECT: increased resolution of the method of laser-pyrolytic deposition of the anode electrode of a tunnel MIM diode.

1 cl, 2 dwg