FIELD: electron microscopy.
SUBSTANCE: method for monitoring cross sections of multilayer structures of semiconductor chips of integrated circuits. When implementing the method, contrasting a layer of silicon nitride on silicon dioxide is carried out by applying a contrasting coating to the surface of the sample that consists of a platinum-containing layer deposited in a system of focused ion beam from vapour of an organometallic compound of platinum when the ion beam is incident at an angle of 10-15 degrees to the surface of the sample.
EFFECT: improved contrast of the silicon nitride layer in relation to the silicon dioxide layer in electron microscopy.
1 cl, 1 dwg
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