FIELD: microelectronics.
SUBSTANCE: present invention relates to methods for manufacturing devices based on ferroelectric materials. This method is implemented by local implantation of gallium ions into a thin amorphous hafnium oxide film with a thickness of 3-100 nm using point-by-point exposure of the film with a focused ion beam according to a given pattern, and the exposure dose is selected so that the average concentration of implanted gallium ions in hafnium oxide is 0.1-2.0, at. %, after which the sample is thermally annealed at a temperature of 350-1000°C.
EFFECT: method can be used to develop and create switchable opto- and microelectronics devices.
1 cl, 2 dwg
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