METHOD FOR FORMATION OF HEXAGONAL PHASE OF SILICON Russian patent published in 2019 - IPC H01L21/265 

FIELD: physics.

SUBSTANCE: invention can be used for making light-emitting devices based on silicon hexagonal phase, which provides efficient excitation of photoluminescence. Essence of the invention is that in a method of forming a phase of hexagonal silicon by implanting into a plate of ions having a atomic radius greater than the atomic radius of silicon made from diamond-like monocrystalline silicon, and forming as a result of said implantation in diamond-like monocrystalline silicon inclusion plates, initiating occurrence in it of increased mechanical stresses, creating energy conditions for transformation of diamond-like phase of monocrystalline silicon into its hexagonal phase, in order to increase stability of occurrence in diamond-like monocrystalline silicon of said plate of zone of increased mechanical stresses, nitrogen and gallium ions are implanted through a thin layer of silicon nitride of thickness, which is obtained on the surface of initial plate, on one side, which does not prevent passage through the layer of implanted gallium and nitrogen ions, on the other side, sufficient for the selected implantation energy for locking under subsurface layer of diamond-like monocrystalline silicon adjacent to said silicon nitride layer of said plate of implanted nitrogen and gallium ions to form, during subsequent annealing, a plate in said subsurface layer of inclusions of gallium nitride, resulting in stable formation in said layer of hexagonal silicon phase with high filling of said layer with said phase.

EFFECT: possibility of increasing stability of zone of increased mechanical stress.

1 cl, 2 dwg