FIELD: chemistry.
SUBSTANCE: TiN layer is removed selectively to SiO2, tungsten and polysilicon during reactive ion etching thereof in O2 plasma with a fluoroplastic plate present in the discharge area, said plate having an area of 2-20% of the working surface of a high-frequency (HF) electrode, etching is carried out with HF power density of 1-3 W/cm2, and the working surface of the HF electrode is coated with silicon, graphite or another fluorine-absorbing material.
EFFECT: improved method.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR REACTIVE ION ETCHING TITANIUM NITRIDE LAYER SELECTIVELY TO ALUMINIUM OR SILICON DIOXIDE | 2009 |
|
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| COMPOSITION OF GAS MIXTURE TO FORM TANTALUM NITRIDE METAL GATE BY PLASMA ETCH CHEMISTRY | 2010 |
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| METHOD FOR OBTAINING COMPONENT CONFIGURATION IN SILICON-BEARING LAYERS | 1992 |
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