FIELD: semiconductors.
SUBSTANCE: invention proposes a semiconductor structure and a method for its manufacturing. The semiconductor structure includes a base and a signal transmission portion, wherein the signal transmission portion is located in the base and includes a first connection layer, a second connection layer, and a third connection layer, wherein the second connection layer is located on the first connection layer and the third connection layer the layer is located on the second connecting layer; wherein the first connecting layer, the second connecting layer and the third connecting layer include different conductive materials, and the thermal expansion coefficients of the second connecting layer and the third connecting layer are less than the thermal expansion coefficient of the first connecting layer.
EFFECT: improving the characteristics of the semiconductor structure by reducing the impact on the crystal lattice around the part for signal transmission.
10 cl, 19 dwg
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