METHOD OF FORMING STRUCTURES OF MAGNETIC TUNNEL BARRIERS FOR MAGNETORESISTIVE RANDOM ACCESS MAGNETIC MEMORY AND STRUCTURE OF MAGNETIC TUNNEL BARRIER FOR MAGNETORESISTIVE RANDOM ACCESS MAGNETIC MEMORY (VERSIONS) Russian patent published in 2009 - IPC H01L21/8229 B82B3/00 

FIELD: physics; computer engineering.

SUBSTANCE: invention relates to storage devices, realised using micro- and nanotechnology methods. The method of forming structures of magnetic tunnel barriers for magnetoresistive random access magnetic memory involves formation of a magnetic tunnel barrier on a substrate, with a freely re-magnetised layer, a layer with fixed magnetisation intensity and a tunnel insulating layer, lying between the freely re-magnetised layer and the layer with fixed magnetisation intensity. To form a magnetic tunnel barrier on the substrate in a vacuum at room temperature, a layer of iron is deposited. A silicon layer is then deposited on to the layer of iron and the surface of the silicon layer is oxidised in glow-discharge plasma, after which a layer of ferromagnetic silicide is formed under the silicon layer through solid phase reaction at temperature 400-800°C. A layer with fixed magnetisation intensity is then formed on the tunnel insulation layer.

EFFECT: formation of a ferromagnetic electrode, made in form of a freely re-magnetised layer, in contact with a tunnel barrier with high characteristic smoothness, absence of paramagnetic phase with simplification of the method of making magnetic tunnel barriers, easier integration into existing silicon technology of making memory elements, as well as cheaper process while retaining competitive characteristics.

10 cl, 2 dwg