FIELD: technology for producing thin films.
SUBSTANCE: technology for producing thin films of gallium oxide. Invention can be used to create semiconductor devices, in particular a solar blind photodetector and a Schottky diode. The oxidation reaction of the volatile starting compound is initiated by oxygen plasma. Elementary gallium is used as the starting volatile compound. The gallium furnace is heated to 1000°C. Oxidation and deposition of elemental gallium onto a substrate heated to 600°C, is carried out in a plasma-chemical reactor.
EFFECT: increasing the structural quality of gallium oxide films on c-oriented sapphire under nonequilibrium plasma conditions.
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