SOLID SOLUTIONS FERROELECTRIC FILMS PRODUCTION METHOD Russian patent published in 2019 - IPC C23C14/06 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to the thin films for microwave applications production technology and can be used for the films optimal component compositions and the single-crystal substrate sections selection for the epitaxial growth achievement. At the first stage, the substrate material is determined, on which the thin film production is desired. Then, based on the substrate materials interplanar domains of the and the film being grown mismatching, selecting the target to be sprayed suitable materials. Then, from the selected target materials, selecting the material from the conditions for ensuring the substrate interplanar domains and the film mismatching in the different from the first direction. Thus, the film and the substrate two-dimensional domains are matched, at that, the residual mismatches compensation takes place. Next, the selected target material is sprayed onto the sapphire substrate in the oxygen atmosphere at the pressure of 2 Pa and the substrate temperature of 850 °C.

EFFECT: technical result is improvement in the thin films for microwave applications structural quality and crystallinity on the mismatched substrates.

1 cl, 2 dwg