SIGNAL FREQUENCY AMPLIFIER Russian patent published in 2024 - IPC H03F3/04 

FIELD: radio; radar.

SUBSTANCE: signal frequency amplifier based on 4 bipolar transistors is proposed, containing an input selective parallel oscillatory circuit (OC), shunted by a resistor in order to reduce the quality factor, to which the antenna is galvanically connected through a resistor and the emitter of a transistor with a common base (CB). The other messenger of the selective OC is grounded at high frequency (HF), and at direct current (DC) it is connected to a common bus; and containing a generator-amplifier with a master parallel CC, shunted by a resistor in order to reduce the quality factor. The generator-amplifier is a “swing frequency generator” circuit, the load of one of the transistors of which is a resistor, to which the emitter of the output transistor is also galvanically connected. The terminals of all transistors are connected galvanically or through resistors. The structure of the generator-amplifier transistors is opposite to the structure of the input and output transistors. The antenna is connected to the input selective OC through a resistor to reduce the influence of the reactive parameters of the antenna in the event, for example, of foreign objects approaching it. The antenna can be connected to the input selective OC galvanically (without a resistor) if there is no influence on it from foreign objects. For mass production, printed inductor technology or stripline inductor technology can be used. To power the collector of the first stage transistor, a stable voltage source is used, which can be excluded if the resistor value is sufficiently large between the collector of the first stage transistor and the collector of the generator-amplifier transistor. The proposed circuit can remain operational when the supply voltage drops to half the nominal value.

EFFECT: scheme can be used in mobile and stationary stations of radio relay lines (RRL), in mobile radar stations (RS), in missile guidance heads of anti-aircraft missile systems (SAM).

4 cl, 1 dwg