METHOD FOR MATCHING HIGH-FREQUENCY PLASMA SOURCE WITH POWER SOURCE Russian patent published in 2024 - IPC H05H1/24 H05H1/46 H01J37/32 

Abstract RU 2812968 C1

FIELD: plasma engineering.

SUBSTANCE: powerful plasma high-frequency ion sources used in atomic beam injectors. The RF power supply is connected to the antenna circuit, which is divided into two or three parts. In this case, the antenna circuit is inductively coupled to the plasma load. With this connection method, the inductance between the connection points and the total inductance of the oscillatory circuit have such a ratio that the active resistance of the oscillatory circuit coincides with the output impedance of the RF source.

EFFECT: increasing the efficiency of transfer of RF power to the plasma.

1 cl, 4 dwg

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RU 2 812 968 C1

Authors

Shikhovtsev Igor Vladimirovich

Kondakov Aleksei Anatolevich

Gavrisenko Daniil Iurevich

Sotnikov Oleg Zakharovich

Dates

2024-02-06Published

2023-09-26Filed