HIGH-FREQUENCY GASEOUS-DISCHARGE SOURCE OF HIGH-DENSITY IONS WITH LOW-IMPEDANCE ANTENNA Russian patent published in 2001 - IPC

Abstract RU 2171555 C1

FIELD: generation of high-density plasma with use of HF fields. SUBSTANCE: invention is predominantly intended for employment in plasma equipment for pickling and deposition of coats on substrates 150 mm and over in size. Source of high-density ions has working chamber made of metal, aid controlling pressure of gas in working chamber, HF variable voltage generator connected to antenna exciting HF field inside working chamber that is located in working chamber. Antenna comes in the form of conducting spiral, spaces between turns of spiral are filled with dielectric and spiral itself is isolated from working chamber by layer of dielectric. Employment of small thickness dielectric results in effective transformation of current flowing through antenna to plasma current. Manufacture of antenna in the form of multistart-start spiral makes it possible to reduce both reactive and active impedance facilitating its matching with generator. Spiral is fabricated from conducting bus whose height exceeds thickness of spiral and thickness of dielectric separating antenna from working chamber by factor of three as minimum and distance between adjacent turns of spiral is chosen within certain limits. Technical result of invention lies in enhanced efficiency of generation of current in plasma and simplified matching of antenna with HF generator thanks to diminished inductive impedance of antenna causing limitation of HF current excited in plasma under working condition. EFFECT: enhanced efficiency of generation of current in plasma. 11 cl, 11 dwg

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RU 2 171 555 C1

Authors

Berlin E.V.

Dates

2001-07-27Published

2000-03-06Filed