METHOD FOR TRANSMITTING RF POWER TO PLASMA SOURCE Russian patent published in 2024 - IPC H03H7/40 H01J37/32 H05H1/46 

FIELD: plasma technology.

SUBSTANCE: invention relates to powerful ion sources with a plasma high-frequency ion source and can be used in atomic beam injectors. A symmetrical connection of the RF antenna is used. RF power is supplied to the resonant circuit of the RF antenna from an RF isolation transformer with a midpoint on the secondary winding. The screens of the supply cables are connected to the midpoint of the RF antenna circuit. The resonant circuit capacitors are connected between the midpoint of the circuit and the terminals of the RF antenna.

EFFECT: increased transmitted RF power to the load, as well as to reduced electric field strength at the ends of the antenna and thereby eliminating breakdown at the antenna at high transmitted power.

1 cl, 1 dwg