FIELD: electronics.
SUBSTANCE: invention relates to electronics, photonics, semiconductor technology, the production of high-purity substances, as well as isotopically enriched germanium, and can be used in the manufacture of highly sensitive low-background infrared radiation detectors, matrix elements of quantum computers, photodetectors, highly sensitive detectors of ionizing radiation, in particular, for research processes double beta decay. First, phonon absorption of samples of isotopically pure germanium single crystals from the series 70Ge, 72Ge, 73Ge, 74Ge, 76Ge is recorded using the IR spectroscopy method. Phonon absorption peaks of germanium samples are recorded in the wavelength range of 11.8-33.3 mcm, corresponding to wave numbers of 300-850 cm-1. From the wave number of any of the phonon absorption peaks in the specified wavelength region, the value of M is calculated using the formula M = -(1/k)(lnϑn/ln(1.6ϑ0), where ϑn is the wave number of the n-th phonon absorption peak of the identified isotopically pure germanium single crystal in the region of 11.8 - 33.3 mcm, n is the serial number of the absorption peak; ϑ0 is the wave number of the corresponding n-th peak of phonon absorption for natural germanium natGe; k is a coefficient in the range of 0.0062-0.0072. The calculated M value for 70Ge is 70; for 72Ge - 72; for 73Ge - 73, for 74Ge - 74, for 76Ge - 76.
EFFECT: invention allows for express analysis of objective identification of isotopically pure germanium single crystal for the entire range of isotopic varieties of germanium.
1 cl, 3 dwg, 2 tbl
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Authors
Dates
2024-02-06—Published
2023-04-03—Filed