MANUFACTURING NANOWIRE STRUCTURE FOR QUANTUM DEVICE Russian patent published in 2024 - IPC G06N10/00 H10N69/00 

FIELD: nanowire structures.

SUBSTANCE: invention is related to a method for manufacturing a nanowire structure for a quantum device, a quantum device and a method of its operation. In the method, in the mask forming phase, a first segment of an amorphous mask is formed on an underlying base layer of the substrate, the first segment includes a first series of grooves exposing the base layer; in the mask forming phase, forming a second segment of an amorphous mask on the base layer, the second segment includes a second series of grooves exposing the base layer, the first and second segments not overlapping, the open end of one of the first series of grooves is facing the open end of one from the grooves of the second series, but the ends are separated by a section of the amorphous mask; in the semiconductor growth phase, the semiconductor material is grown, under local growth conditions, in the first and second series of grooves to form the first and second nanowire subnetworks on the base layer, and the first and second nanowire subnetworks are connected to form a single nanowire network on the base layer.

EFFECT: increase of reliability of nanowire structures for quantum devices

15 cl, 12 dwg