INTEGRATED CIRCUIT WITH SENSING TRANSISTOR ARRAY, SENSING APPARATUS AND MEASURING METHOD Russian patent published in 2018 - IPC G01N27/414 B82Y15/00 

Abstract RU 2650087 C2

FIELD: chemistry.

SUBSTANCE: invention relates to analytical chemistry. Integrated circuit (100) sensor array, comprising semiconductor substrate (110); insulating layer (120) over said substrate; first transistor (140a) on said insulating layer, the first transistor comprising exposed functionalised channel region (146a) in between source region (142a) and drain region (144) for sensing an analyte in a medium; second transistor (140b) on said insulating layer, the second transistor comprising exposed channel region (146b) in between source region (142b) and drain region (144) for sensing a potential of said medium; and voltage bias generator (150) conductively coupled to the semiconductor substrate for providing said transistors with a bias voltage, said voltage bias generator being responsive to the second transistor. Sensing apparatus comprising such an IC and an analyte measurement method using such an IC are also disclosed.

EFFECT: invention provides for the formation of a sensing apparatus with a simple design.

20 cl, 6 dwg

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RU 2 650 087 C2

Authors

Klotvijk Jokhan Khendrik

Meskher Marlen

De Graf Paskal

Marselis Bout

Dates

2018-04-06Published

2013-10-11Filed