METHOD OF MANUFACTURING SEMICONDUCTOR CONVERTER OF IONIZING RADIATION ENERGY TO ELECTRICITY Russian patent published in 2018 - IPC G21H1/06 

FIELD: technological processes.

SUBSTANCE: invention relates to a method for manufacturing ultra-thin semiconductor structures with a potential barrier capable of generating useful electrical energy under the action of ionizing radiation. Substrate with a thickness of 100 to 1,000 mcm is made of type IIb diamond, on one side of the diamond substrate, a sacrificial layer and a residual layer are formed by implanting ions with an energy of at least 100 keV, followed by annealing the substrate in a vacuum or an inert gas atmosphere at a temperature of 700 to 2,000 °C. Then carry out a synthesis of an epitaxial layer of type IIb diamond with a thickness of 5 to 50 mcm on the residual layer, remove the synthesized layer of diamond from the ends of the substrate, process the sacrificial layer by electrochemical etching in a strong oxidant until the sacrificial layer is completely removed, separate the epitaxial layer of diamond with the residual layer from the main part of the substrate, form a positive contact of the converter on the residual layer. Further, the diamond epitaxial layer is exposed to ionizing radiation in an oxygen atmosphere or heated in an oxygen atmosphere or to an oxygen plasma and forms a negative contact of the converter on the epitaxial layer of the diamond.

EFFECT: providing the maximum specific power and minimizing the thickness of the converter made of diamond, the possibility of creating autonomous radioisotope sources of electric power supply with a large ratio of power to mass and dimensions, as well as the possibility of manufacturing 10–500 converters with multiple use of one diamond substrate.

3 cl, 6 dwg, 3 ex