FIELD-EFFECT TRANSISTOR Russian patent published in 2024 - IPC H01L29/772 H01L29/76 H01L29/78 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to semiconductor devices and can be used in amplifiers of weak electrical signals, as well as in medical devices for detecting biological markers. Field-effect transistor has a semiconductor substrate, on the surface of which there are both a drain region and a drain region, which form a p-n junction with the substrate and a field gate. Field gate is separated from the substrate by a dielectric layer, and the drain area additionally contains at least two projections directed towards the field gate, and creates a p-n junction with the substrate. Steepness of the top of the protrusions exceeds the steepness of the rest of the drain area. This ensures achievement of high electric fields only near hemispherical tops of protrusions, where there is performed avalanche amplification of charge carriers coming from an inverse layer located under the field gate. Concentration of the avalanche process near identical hemispherical regions of the protrusions provides high stability of the signal amplification factor.

EFFECT: invention improves the sensitivity threshold of the field-effect transistor by significantly increasing the signal-to-noise ratio in the device.

1 cl, 2 dwg