AVALANCHE TRANSISTOR Russian patent published in 2024 - IPC H01L29/73 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to semiconductor devices and can be used as a linear amplifier of superweak electric and photoelectric pulse signals consisting of one or more electrons. Avalanche transistor comprises a semiconductor substrate, on the surface of which an array of individual avalanche microtransistors capable of operating in the Geiger counter mode is formed, wherein each microtransistor comprises a first semiconductor region which creates a p-n junction with the substrate, and a second semiconductor region which has no common boundary with the substrate and which forms a p-n junction with the first semiconductor region. At that, the first semiconductor regions of all microtransistors are directly connected to the first common current-conducting bus, and the second semiconductor regions are connected to the second common current-conducting bus by means of individual film resistors, wherein first common current-conducting bus, second common current-conducting bus and individual film resistors are separated from substrate by dielectric layer. Signals amplified by the avalanche process in microtransistors are summed on a common current-conducting bus, and the more microtransistors in the matrix, the greater the linearity range of the device.

EFFECT: providing linearity of amplification of superweak electric pulses consisting of single or several electrons.

1 cl, 2 dwg