SPIN HETEROSTRUCTURE WITH COMPOSITE ACTIVE REGION WITH QUANTUM DOTS Russian patent published in 2024 - IPC H01L29/00 

FIELD: physics.

SUBSTANCE: invention can be used for fabrication of microwave heterotransistors on quantum dots. Essence of the invention is that a spin heterostructure with a composite active region with quantum dots comprises introduced barriers in the form of quantum dots in a quantum well, wherein a composite active region is used, in which a layer of ferromagnetic semiconductor material forming a quantum well and a layer of quantum dots are successively included, composition of which and characteristics provide high quantum-limited drift rate of carriers and high quantum-limited Curie temperature of the ferromagnetic semiconductor material of the quantum well.

EFFECT: providing the possibility of increasing operating speed, improving energy parameters and frequency characteristics, stable spin current transfer and increasing the range of operating temperatures of spin devices.

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