MEMRISTOR BASED ON MIXED OXIDE OF METALS Russian patent published in 2013 - IPC H01L45/00 B82B1/00 

Abstract RU 2472254 C9

FIELD: electricity.

SUBSTANCE: device comprises an active layer arranged between two current-conducting layers, being in electric contact with them and representing an oxide of the type ABOx, where the element B is titanium, or zirconium, or hafnium, and the element A - a trivalent metal with ion radius, equal to 0.7-1.2 of ion radius of titanium, or zirconium, or hafnium. If the element B is titanium, then A is selected as aluminium or scandium, if the element B is zirconium or hafnium, then A is selected as scandium or ittrium or lutecium.

EFFECT: increased stability and recurrence of switching voltage, resistance in low and high resistance conditions.

3 cl, 2 dwg

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RU 2 472 254 C9

Authors

Alekhin Anatolij Pavlovich

Baturin Andrej Sergeevich

Grigal Irina Pavlovna

Gudkova Svetlana Aleksandrovna

Markeev Andrej Mikhajlovich

Chuprik Anastasija Aleksandrovna

Dates

2013-01-10Published

2011-11-14Filed