FIELD: computer engineering.
SUBSTANCE: use to build reliable ultra-large memory arrays with nonvolatile memory, high degree of integration of elements and low power consumption. Essence of the invention consists in that memory device based on a complementary memristor-diode cell, which is an array of electrically reprogrammable cells with parallel or series access to recording and reading on common electrical buses, is characterised in that in each memory cell, memristors are connected in series and a Zener diode is connected to their common contact, so that the cell has three terminals connected to the common electrical buses, two of which are connected to the contacts of the memristors and one to the contact of the Zener diode.
EFFECT: enabling high integration when combining cells into an ultra-fast array.
1 cl, 7 dwg
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