FIELD: radio electronics.
SUBSTANCE: invention relates to radio electronics and can be used in the structure of operational amplifiers (OA). OA input differential stage consists of two differential stages DC1 and DC2, each of which consists of six bipolar transistors and two voltage sources, wherein in DC1 first (3) input, second (10) output, first (14) and second (15) additional bipolar transistors have n-p-n structure, and first (5) output, first (7) and second (11) matching, second (12) output bipolar transistors have p-n-p structure, and in DC2 first (3*) input, second (10*) output, first (14*) and second (15*) additional bipolar transistors have p-n-p structure, and first (5*) output, first (7*) and second (11*) matching, second (12*) output bipolar transistors have n-p-n structure.
EFFECT: higher rate of rise of output voltage (SR) when using classical (non-microwave) silicon technological processes.
1 cl, 13 dwg
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