GAS-SENSITIVE MULTI-SENSOR CHIP Russian patent published in 2024 - IPC G01N27/12 B82Y40/00 

FIELD: measuring.

SUBSTANCE: invention can be used for selective detection of gases. Method of manufacturing a gas analytical multisensor chip, including a dielectric substrate, on the front side of which a set of meander heaters is applied, a dielectric heat-transfer passivating layer of polycrystalline SiC, a set of coplanar interdigital electrodes made of a noble metal, for example, from platinum group metals, a nanostructured zinc oxide layer with a developed relief and thin-film thermistors coated with a passivating low-dimensional layer of SiO₂, wherein heat-transfer passivating layer of polycrystalline SiC is produced by low-temperature magnetron sputtering, the first seed layer of zinc oxide is applied by magnetron or thermal vacuum sputtering with annealing in vacuum and air at temperatures of at least 300 °C, second structured functional layer of ZnO is obtained by immersing a substrate with a nucleating layer in a solution containing zinc cations and hydroxide ions in equal proportions, and held at temperatures of 75–95 °C for 30–180 minutes; substrate with formed zinc oxide nanorods is washed with distilled water, dried at room temperature and annealed for 15–30 minutes at temperature 400–550 °C with subsequent passivation with low-dimensional layer of dielectric from SiO₂.

EFFECT: invention provides the possibility of faster operation and longer service life at low cost of the gas-sensitive multi-sensor chip to vapours of detected gases, the ability of the sensor to function effectively at temperature of 400 °C.

4 cl, 3 dwg