FIELD: nanotechnology.
SUBSTANCE: pulsed laser sputtering of an AlN ceramic target with a stoichiometric composition using an KrF excimer laser with a radiation wavelength of 248 nm is performed. The treatment is carried out in a vacuum at a residual pressure of 10-5 - 10-6 Pa, pulse duration of 10-50 ns and pulse repetition frequency of 15-45 Hz in the substrate temperature range of 700-850°C.
EFFECT: simplified technological process of synthesis.
4 dwg
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