METHOD OF FORMING NANOSIZE CONDUCTING ELEMENT Russian patent published in 2010 - IPC B82B3/00 

Abstract RU 2401246 C1

FIELD: chemistry.

SUBSTANCE: method of making a nanosize conducting element (nanowire) involves vacuum condensation on a substrate in form of a monocrystal having cleavage steps and/or other linear defects. Vacuum condensation is carried out in a given range of temperature of the substrate, rate of condensation and for a formation time for which at least one nanowire forms on linear defects of the sustrate, and on the remaining part of the substrate the fill factor has a value which prevents island coalescence (merging).

EFFECT: formation of solid-state one-dimensional conducting nanostructures without a bending radius, having resistance to ambient medium and made on a substrate which can be any monocrystal.

7 cl, 5 dwg

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RU 2 401 246 C1

Authors

Omorokov Dmitrij Borisovich

Kozlenko Nikolaj Ivanovich

Shvedov Evgenij Vasil'Evich

Dates

2010-10-10Published

2009-08-27Filed