FIELD: microelectronic instrumentation engineering.
SUBSTANCE: proposed sensing element designed for use in pressure and temperature sensors, accelerometers, microscopic relays, and other microelectronic devices has base-oriented single-crystalline silicon substrate 100, diaphragm with silicon nitride layer disposed under hole provided in substrate to form diaphragm chamber, and data signal take-off unit. Novelty is double-layer mechanical design of diaphragm that includes silicon carbide layer. It will be good practice to use Fabry-Perot butt-end fiber-optic interferometer for recording diaphragm sag. Device sensitivity is 1.5 - 3.5 nm/Pa.
EFFECT: enhanced sensitivity of device.
2 cl, 1 dwg, 1 tbl
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