FIELD: tool engineering.
SUBSTANCE: in the method of manufacturing crystals of microelectromechanical systems, protective coatings are applied to the front and back sides of the plate, photolithography is carried out on the protective layers from the front and back sides, silicon is etched from the front and back sides of the plate to a specified depth and with a specified profile, a protective layer is applied from the front side of the plate and the profile of the etched grooves from the raster at the subsequent etching from the back side of the plate, the remnants of masking coatings are removed from the front and back sides of the plate. According to the invention, after silicon etching to a predetermined depth and with a predetermined profile, the protective layer is removed from the face of the plate and the profile of the etched grooves, the profile is processed in the polishing etchant, and the remnants of the masking coatings are removed from the front and back sides of the plate. In addition, photolithography on the protective layers on the front and back side is carried out simultaneously, as a protective layer on the front side of the plate and the profile of etched grooves, a copper film is applied, as masking coatings on the front and back side, identical materials, for example silicon nitride, are used.
EFFECT: invention increases sensitivity and strength of microelectromechanical systems by improving the manufacturing process and formation of silicon crystals with a minimum roughness of the vertical groove profile.
4 cl, 4 dwg
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Authors
Dates
2017-07-12—Published
2016-09-28—Filed