METHOD OF DETECTING MOMENT OF COMPLETION OF CONDITIONING OF REACTOR OF PLASMA-CHEMICAL ETCHING PLANT Russian patent published in 2024 - IPC H01L21/02 

FIELD: electricity.

SUBSTANCE: invention relates to the technology of manufacturing integrated circuits, power electronics devices and micromechanical devices (MEMS) based on silicon. Disclosed is a method for detecting the moment of completion of conditioning a reactor of a plasma-chemical etching plant, based on measuring plasma potential by a Langmuir electrostatic probe, wherein during plasma process in reactor there is no processed plate, measurement is performed in reference argon plasma, and the detected moment of completion of the plasma conditioning process of the reactor corresponds to the moment of completion of cleaning the walls of the reactor from accumulated contaminants with etching products.

EFFECT: increasing the accuracy of determining the moment of completion of the cleaning process.

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