METHOD AND DEVICE FOR MONITORING END-OF-ETCHING MOMENT IN HIGH- FREQUENCY AND MICROWAVE DISCHARGE PLASMA USED IN SEMICONDUCTOR DEVICE MANUFACTURING TECHNOLOGY Russian patent published in 2005 - IPC

FIELD: semiconductor device manufacture for microelectronics and nanoelectronics.

SUBSTANCE: proposed method used for monitoring moment of completion of plasma-chemical etching of micro- and nanoelectronic structure layers includes measurement and treatment of plasma optical emission modulated signal at characteristic wavelength of particle-reagent or particle-product of surface reaction whose intensity varies at end-of-etching moment for layer being removed within area of open windows in lithographic mark; for the purpose use is made of forced low-frequency amplitude modulation of high or microwave carrier frequency of plasma-shaping generator affording modulation of optical plasma emission followed by recording emissive intensity of plasma component which is reagent or product in surface reaction, use being made of phase (synchronous) detection method, where forced low-frequency modulation signal of plasma-shaping generator is used as reference signal.

EFFECT: ability of detecting end-of-etching moment for microelectronic structures having small area of mask windows.

5 cl, 1 dwg