ELECTROSTATIC MEMS SWITCH Russian patent published in 2025 - IPC H01H59/00 

Abstract RU 2833801 C1

FIELD: electricity; physics.

SUBSTANCE: invention relates to elements of X-ray lithography apparatus, in particular, performs the function of a program-controlled X-ray switch as a composite element of a transparent mask in maskless X-ray lithography apparatus. Disclosed is an electrostatic MEMS switch comprising a semiconductor substrate with a dielectric applied thereon and a switching device in the form of a movable electrode. Wherein the movable electrode is a MEMS console, one end of which is fixed on the dielectric, and the free end located above the support formed from the dielectric covers the X-ray radiation channel made in the form of a through hole in the semiconductor substrate and the dielectric, wherein the support location is selected so that the X-ray radiation channel is located on one side of it, and the middle of the MEMS cantilever, which corresponds to the point of the centre of mass of the MEMS cantilever with its uniform cross section along the entire length, is on the other side.

EFFECT: wider range of variation of the area of the switched X-ray channel without increasing the weight and size of the device and high reliability of the device under X-ray radiation conditions.

1 cl, 3 dwg

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RU 2 833 801 C1

Authors

Bespalov Vladimir Aleksandrovich

Dyuzhev Nikolaj Alekseevich

Glagolev Petr Yurevich

Dates

2025-01-28Published

2024-06-24Filed