FIELD: physics.
SUBSTANCE: avalanche mode photodiode matrix (102) is made from silicon plates on a dielectric and through a substrate transfer process. The matrix comprises a plurality of photodiodes (100). The photodiodes (100) include an electrically insulating layer (206), a depletion region (204) and a first (208) and a second (210) doped area. The inter-connection layer (212) includes electrodes (214, 216) which provide electrical connection with photodiodes. The photodiode matrix (102) rests on a bearing plate (217).
EFFECT: high quantum efficiency of the device.
34 cl, 7 dwg
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