FIELD: chemistry.
SUBSTANCE: invention relates to a method for synthesis of titanium dioxide-based coatings on implant surfaces. Four-step cyclic process is carried out by atomic layer deposition in the mode of self-limited growth of titanium dioxide layers at temperature of 215±15 °C in nitrogen flow by cyclic successive alternation of four stages. At the first stage with duration of 0.05 to 0.5 s, TiCl4 vapour is pulsed into the synthesis zone and pressure in the reactor is increased from 0.1-1.5 mbar to 4-5 mbar. At the second stage, pressure in the reactor is reduced to 0.1-1.5 mbar and nitrogen is purged for at least 1 and not more than 20 s. At the third stage with duration of not less than 10 s, but not more than 20 s, an oxygen-containing source is introduced into the reactor, which is oxygen plasma at the rate of oxygen supply to reactor of 150 cm3/min, or water vapour. Pressure in the reactor is maintained at not more than 1.5 mbar. At the fourth stage with duration of 1 to 20 s, the reactor is purged with nitrogen. Cyclic process involving the said four stages makes 10 to 2,000 cycles.
EFFECT: disclosed is a method of synthesis of polycrystalline coatings based on titanium dioxide by atomic layer deposition.
1 cl, 7 dwg, 6 ex
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Authors
Dates
2025-02-03—Published
2024-07-08—Filed