FIELD: physics.
SUBSTANCE: invention relates to the technology of making semiconductor devices which are sensitive to infrared radiation, and can be used to thin the photosensitive layer of a photodetector array. Method involves hybridisation of a photosensitive element with a reading LSI and thinning of the matrix module, which is carried out by chemical-mechanical polishing (CMP) and subsequent chemical-dynamic polishing (CDP). Disclosed are conditions for conducting CMP and CDP.
EFFECT: minimum effect on the crystalline structure of the material, non-flatness of the surface is achieved within the limits ±(1–5) mcm with matrix module size of about 10 × 10 mm.
1 cl, 2 dwg
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