METHOD OF TREATING SURFACE OF PLATES OF INDIUM ANTIMONIDE (100) Russian patent published in 2024 - IPC H01L21/304 

FIELD: optics.

SUBSTANCE: present invention relates to the technology of manufacturing semiconductor devices which are sensitive to infrared radiation, in particular single- and multi-element photodiodes based on indium antimonide (InSb) and can be used in making linear and matrix photodiodes. Method of treating the surface of indium antimonide (100) substrates with improved surface planarization includes the following successive steps: treatment with a suspension containing aluminium (III) oxide with a grain size of 9 mcm, processing time is 90 min, pressure of ~39.4 g/cm²; treatment with a suspension containing aluminium (III) oxide with a grain size of 3 mcm, treatment time is 30 min, pressure of ~39.4 g/cm², processing with diamond suspension with particle size of 1 mcm, processing time is 30 min, pressure of ~39.4 g/cm²; treatment with an etching agent based on lactic acid, hydrogen peroxide, ethylene glycol and sodium chloride solution, treatment time is 30 min, pressure of ~29.6 g/cm².

EFFECT: invention enables to improve the surface flatness of the semiconductor wafer (TTV is less than 7 mcm for wafers with diameter of 2") by including in the process of processing the surface of the substrate the stages of polishing with abrasive suspensions with minimum effect on the crystalline structure of near-surface layers of the material and roughness of less than 1 nm.

1 cl, 2 dwg