OPERATIONAL AMPLIFIER WITH IMPROVED STATIC AND DYNAMIC PARAMETERS ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS Russian patent published in 2025 - IPC H03F3/45 

FIELD: radio engineering.

SUBSTANCE: in the operational amplifier (OA), the drains of the first and third input transistors are connected to the second and first buses of the power source through potential matching circuits, each of which is made in the form of an additional transistor, gate of which is connected to its drain, the drain of the fourth input transistor is connected to the drain and gate of the third and to the gate of the fourth additional transistors, drain of fourth additional transistor is connected to source of fifth additional transistor and gate of sixth additional transistor, drain of the second input transistor is connected to the gate and drain of the seventh additional transistor and the gate of the eighth additional transistor, drain of the eighth additional transistor is connected to the source of the ninth additional transistor and the gate of the tenth additional transistor, drains of the fifth and ninth additional transistors are connected to the input of the buffer amplifier, and an additional correcting capacitor is connected between the combined sources of the input transistors.

EFFECT: increased maximum rate of output voltage rise and voltage gain, reduced systematic component of zero offset voltage in operational amplifier (OA).

3 cl, 11 dwg