FIELD: microwave equipment.
SUBSTANCE: invention relates to microwave equipment and is intended for frequency multiplication of microwave signals in communication systems, radar, radio navigation, as well as in various measuring and special radio equipment. Frequency multiplier comprises a coupling capacitor, an input low-pass filter, an input and output matching circuits, an unloaded resonator, bias circuit low-pass filter, output bandpass filter, nonlinear element, which is made in form of Schottky diode with deep impurity centres (DIC), made on epitaxial layer of n-type conductivity, formed on substrate of n+-type, so that epitaxial layer of n-type conductivity is additionally doped with deep impurity centres of acceptor type, wherein total surface density of deep impurity centres of acceptor type in epitaxial layer of n-type conductivity is from 10% to 99% of surface density of ionized main dopant donor impurity in epitaxial layer of n-type conductivity, wherein surface density of ionized deep impurity centres of acceptor type in epitaxial layer of n-type conductivity in absence of voltage applied to diode is not less than 10% of total surface density of deep impurity centres of acceptor type in epitaxial layer of n-type conductivity, and deep impurity centres of acceptor type in epitaxial layer of n-type conductivity are characterized by ionization time constant not less than 10 nanoseconds.
EFFECT: higher efficiency of the device.
1 cl, 2 dwg
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Authors
Dates
2025-04-04—Published
2024-07-30—Filed