CRYSTAL OF A MONOPOLAR-BIPOLAR POWER HIGH-VOLTAGE HYPERVELOCITY GALLIUM ARSENIDE DIODE WITH HETEROJUNCTIONS, WITH PHOTONIC AND PHOTOVOLTAIC PROPERTIES Russian patent published in 2023 - IPC H01L29/861 

FIELD: semiconductor devices.

SUBSTANCE: crystal of a monopolar-bipolar power high-voltage hypervelocity gallium arsenide diode with heterojunctions, with photonic and photovoltaic properties includes a single-crystal GaAs substrate of n⁺-type conductivity with epitaxial layers successively made on it: a GaAs buffer layer of n⁺-type conductivity, Al_xGa₁ layer _-x As of n⁺-type conductivity with x = 0.25 ÷ 0.6, GaAs layer of p⁺-type conductivity, Al_xGa_1-xAs layer of p⁺-type conductivity with x = 0.25÷ 0.6, GaAs layer of p⁺-type conductivity, and ohmic contacts on the surface of the epitaxial GaAs layer of p⁺-type conductivity and on the back surface of the single-crystal GaAs substrate n⁺-type conductivity. Inside the heterogeneous volume of AlGaAs - GaAs of p⁺-type conductivity, on the surface of the GaAs layer of p-type conductivity, local epitaxial GaAs layers of n⁺-type conductivity are made, electrically connected with GaAs - AlGaAs layers of p⁺-type conductivity. Inside the heterogeneous volume of AlGaAs - GaAs of p⁺-type conductivity, on the surface of the GaAs layer of p-type conductivity, local Schottky barriers are made, electrically connected with GaAs - AlGaAs layers of p⁺-type conductivity. To passivate the surface charge, nanometer ALD films of aluminium oxide and nitride are deposited on the side surface of the crystal.

EFFECT: reduction of forward voltages, capacitive parasitics and reverse recovery time of diodes; increase of the operating temperatures of the monopolar-bipolar diode crystal and reduction of parasitic leakage currents; increase of the dynamic stability of diode structures in the mode of hard resonant switching at high values of di/dt and dU/dt; to implement the concept of a power hypervelocity high-voltage diode, LED up to volume coherent radiation with a strong inversion of photovoltaic diode charge carriers.

4 cl, 6 dwg